Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions

被引：8

作者：

Andrievskii, VV

Berkutov, IB

Komnik, YF

Mironov, OA

Whall, TE

机构：

[1] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

LOW TEMPERATURE PHYSICS | 2000年 / 26卷 / 12期

关键词：

D O I：

10.1063/1.1334440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si/Si0.64Ge0.36 heterojunctions with p-type conductivity exhibit an electron overheating effect. An analysis of the damping of the amplitudes of the Shubnikov-de Haas oscillations upon a change in temperature and applied electric field yields the temperature dependence of the electron-phonon relaxation time: t(eph)=10(-8)T(-2) s. (C) 2000 American Institute of Physics. [S1063-777X(00)00512-0].

引用

页码：890 / 893

页数：4

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