Light and thermally induced effects in porous silicon layers

被引：11

作者：

Islam, MN ^{[1
]}

Dobal, PS ^{[1
]}

Bist, HD ^{[1
]}

Kumar, S ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 01期

关键词：

semiconductors; nanostructures; photoconductivity; inelastic light scattering;

D O I：

10.1016/S0038-1098(98)00145-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Porous silicon layers (PSL) prepared by anodizing crystalline silicon are found to show an increased dark conductivity upon exposure to light and also upon fast cooling from high temperatures. These effects can be annealed out but cannot be reversed upon exposure to infrared light. Their decay with time, dependence on exposure times and temperatures have been studied in detail. Micro-Raman measurements on PSL showed the presence of alpha-Si : H which is suggested to be responsible for these effects. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：43 / 46

页数：4

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