The structure and optoelectronic properties of dislocations in GaN

被引：28

作者：

Cherns, D ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 49期

关键词：

D O I：

10.1088/0953-8984/12/49/320

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reviews the structure of threading dislocations, nanopipes and inversion domains in (0001) GaN films grown by metal-organic chemical vapour deposition. A new mechanism for generation of misfit dislocations in epitaxial laterally overgrown (ELOG) GaN and in AlGaN/GaN interfaces is described. Recent cathodoluminescence studies in the scanning electron microscope are described, showing that individual threading defects act as non-radiative recombination centres in ELOG GaN and in InGaN quantum wells in GaN.

引用

页码：10205 / 10212

页数：8

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