Atomic equilibrium concentrations in (InGa)As quantum dots

被引：10

作者：

Galluppi, M

Frova, A

Capizzi, M

Boscherini, F

Frigeri, P

Franchi, S

Passaseo, A

机构：

[1] Univ Rome La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy

[2] Univ Bologna, Dipartmento Fis, INFM, I-40127 Bologna, Italy

[3] CNR, MASPEC, I-43010 Fontanini, Italy

[4] Univ Lecce, Dipartimento Ingn Innovaz, INFM, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1372202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In InxGa1-xAs quantum dots (QDs), the plot of peak emission energies versus the total amount of indium exhibits a well defined pattern, which is independent of the indium concentration. Moreover, photoluminescence spectra of InAs QDs grown by atomic layer molecular beam epitaxy (ALMBE) roughly coincide with those of In0.5Ga0.5As QDs grown by metalorganic vapor phase deposition. We suggest that the total amount of In rather than the nominal In concentration determines the emission energy of these two sets of QDs, and that In interdiffusion is rather strong in ALMBE growth. (C) 2001 American Institute of Physics.

引用

页码：3121 / 3123

页数：3

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