Growth and characterization of Ge nanocrystals

被引：27

作者：

Guha, S ^{[1
]}

Wall, M

Chase, LL

机构：

[1] USN, Res Lab, Div Condensed Matter & Radiat Sci, Washington, DC 20375 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Div Mat & Chem Sci, Livermore, CA 94550 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

关键词：

Ge nanocrystals; Raman spectroscopy; X-ray; TEM;

D O I：

10.1016/S0168-583X(98)00578-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];

摘要：

We have synthesized Ge nanocrystals of mean sizes 4, 8, and 12 nm by ion-implanting Ge+ ions into thermally grown SiO2 films and subsequent annealing of the films at 830 degrees C for 30 min in nitrogen. These films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. A distribution of particle size was identified by TEM in a 100 nm band below the surface. Particle sizes were estimated by these three techniques. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：367 / 372

页数：6

共 11 条

[1]

Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots [J].

Bottani, CE ;

Mantini, C ;

Milani, P ;

Manfredini, M ;

Stella, A ;

Tognini, P ;

Cheyssac, P ;

Kofman, R .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2409-2411

[2]

Porous silicon: From luminescence to LEDs [J].

Collins, RT ;

Fauchet, PM ;

Tischler, MA .

PHYSICS TODAY, 1997, 50 (01) :24-31

[3]

Resonant Raman scattering and photoluminescence studies of porous silicon membranes [J].

Guha, S ;

Steiner, P ;

Lang, W .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8664-8668

[4]

Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing [J].

Guha, S ;

Pace, MD ;

Dunn, DN ;

Singer, IL .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1207-1209

[5]

VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLITE GE EMBEDDED IN A GLASSY SIO2 MATRIX - EVIDENCE IN SUPPORT OF THE QUANTUM-CONFINEMENT MECHANISM [J].

MAEDA, Y .

PHYSICAL REVIEW B, 1995, 51 (03) :1658-1670

[6]

Min KS, 1996, APPL PHYS LETT, V68, P2511, DOI 10.1063/1.115838

[7]

PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J].

NILSSON, G ;

NELIN, G .

PHYSICAL REVIEW B, 1971, 3 (02) :364-&

[8]

RESONANT RAMAN-STUDY OF PHONON STATES IN GAS-EVAPORATED GE SMALL PARTICLES [J].

SASAKI, Y ;

HORIE, C .

PHYSICAL REVIEW B, 1993, 47 (07) :3811-3818

[9]

Logarithmic normal distribution of particle size from a luminescence line-shape analysis in porous silicon [J].

Yorikawa, H ;

Muramatsu, S .

APPLIED PHYSICS LETTERS, 1997, 71 (05) :644-646

[10]

Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects [J].

Zacharias, M ;

Fauchet, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :380-382

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