Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

被引：156

作者：

Bi, Hui ^{[1
,2
]}

Sun, Shengrui ^{[1
,2
]}

Huang, Fuqiang ^{[1
,2
]}

Xie, Xiaoming ^{[3
]}

Jiang, Mianheng ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 02期

基金：

中国博士后科学基金;

关键词：

SENSITIZED SOLAR-CELLS; ELECTRODES;

D O I：

10.1039/c1jm14778a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We first demonstrate the use of few layer graphene films directly grown on SiO2 substrates obtained by ambient pressure chemical vapor deposition (APCVD) as counter electrodes in dye-sensitized solar cells (DSSCs). The layer number and crystal size of graphene films can be tuned by changing growth temperature, growth time and gas flow ratio (CH4 : H-2). The continuous graphene films exhibit extremely excellent electrical transport properties with a sheet resistance of down to 63.0 Omega sq(-1) and extremely high mobility of up to 201.4 cm(2) v(-1) s(-1). The highly conductive graphene films as counter electrodes of DSSCs achieve a photovoltaic efficiency of 4.25%, which is comparable to the DSSC efficiency (4.32%) based on FTO counter electrodes. Our work indicates the great potential of CVD graphene films directly grown on dielectric substrates for photovoltaic and electronic applications.

引用

页码：411 / 416

页数：6

共 24 条

[1] Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films [J].