Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

被引：135

作者：

Ding, Xuli ^{[1
,2
]}

Ding, Guqiao ^{[1
]}

Xie, Xiaoming ^{[1
]}

Huang, Fuqiang ^{[3
]}

Jiang, Mianheng ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China

来源：

CARBON | 2011年 / 49卷 / 07期

关键词：

D O I：

10.1016/j.carbon.2011.02.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Few layer graphene was grown on hexagonal boron nitride single crystal flakes by chemical vapor deposition without using metal catalysts. High quality and thickness controllability of the graphene layers are confirmed by Raman spectroscopy and transmission electron microscopy. Chemical vapor deposition of graphene on this perfect-lattice-matching dielectric substrate offers many advantages including cost effectiveness, easy scalability and compatibility with standard intergraded circuit processes and promises an advance to graphene's applications in microelectronics and optoelectronics. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：2522 / 2525

页数：4

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