Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

被引：2352

作者：

Song, Li ^{[1
]}

Ci, Lijie ^{[1
]}

Lu, Hao ^{[1
]}

Sorokin, Pavel B. ^{[1
]}

Jin, Chuanhong ^{[2
]}

Ni, Jie ^{[1
]}

Kvashnin, Alexander G. ^{[3
]}

Kvashnin, Dmitry G. ^{[3
]}

Lou, Jun ^{[1
]}

Yakobson, Boris I. ^{[1
]}

Ajayan, Pulickel M. ^{[1
]}

机构：

[1] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

[2] Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan

[3] Siberian Fed Univ, Krasnoyarsk 660041, Russia

来源：

NANO LETTERS | 2010年 / 10卷 / 08期

关键词：

Boron nitride; electrical microscopy; optical and mechanical properties; computation; MONOLAYER; SCATTERING; BN;

D O I：

10.1021/nl1022139

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN Films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoincientation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.

引用

页码：3209 / 3215

页数：7

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