Universal description of channel conductivity for nanotube and nanowire transistors

被引：16

作者：

Rotkin, SV ^{[1
]}

Ruda, HE

Shik, A

机构：

[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[2] Univ Toronto, Electr & Photon Mat Grp, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.1604462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowire charge density distribution. (C) 2003 American Institute of Physics.

引用

页码：1623 / 1625

页数：3

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