Wideband DHBTs using a graded carbon-doped InGaAS base

被引：31

作者：

Dahlström, M

Fang, XM

Lubyshev, D

Urteaga, M

Krishnan, S

Parthasarathy, N

Kim, YM

Wu, Y

Fastenau, JM

Liu, WK

Rodwell, MJW

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] IQE Inc, Bethlehem, PA 18015 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

carbon doping; heterojunetion bipolar transistor; palladium;

D O I：

10.1109/LED.2003.815009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f(tau) and 400 GHz f(max). The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8 . 10(19)/cm(3) to 5 . 10(19)/cm(3), an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 Omega) and contact (<10 Omega-mu m(2)) resistivities are in part responsible for the high f(max) observed.

引用

页码：433 / 435

页数：3

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