300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO ≥ 6 V

We report MOCVD-grown NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) with simultaneous values of f(T) and f(MAX) as high as 300 GHz for J(C) = 410 kA/cm(2) at V-CE = 1.8 V The devices maintain outstanding dynamic performances over a wide range of biases including the saturation mode. In this material system the pi GaAsSb base conduction band edge lies 0.10-0.15 eV above the InP collector conduction band, thus favoring the use of nongraded base-collector designs without the current blocking effect found in conventional InP/GaInAs-based DHBTs, The 2000 Angstrom InP collector provides good breakdown voltages of BVCEO = 6 V and a small collector signal delay of similar to0.23 ps. Thinner 1500 Angstrom collectors allow operation at still higher currents with f(T) > 200 GHz at J(C) = 650 kA/cm(2).