Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with FT as high as 250 GHz and BVCEO > 6V

被引：14

作者：

Dvorak, MW ^{[1
]}

Pitts, OJ ^{[1
]}

Watkins, SP ^{[1
]}

Bolognesi, CR ^{[1
]}

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Compound Semicond Device Lab, Burnaby, BC V5A 1S6, Canada

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report manufacturable ultrahigh-speed MOCVD-grown InP/GaAsSb/InP DHBTs with f(T) = 270 GHz and f(MAX) > 300 GHz and featuring BVCEO > 6 V With a 250 Angstrom C-doped base layer. Additionally, DHBTs fabricated with a 200 Angstrom base feature f(T) = 305 GHz and f(MAX) = 230 GHz without reducing BVCEO. The present devices are the fastest DHBTs ever reported.

引用

页码：178 / +

页数：4

共 8 条

[1]

DVORAK MW, J VAC SCI TECHNOL A, V18, P761

[2] Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy [J].

Hu, J ;

Xu, XG ;

Stotz, JAH ;

Watkins, SP ;

Curzon, AE ;

Thewalt, MLW ;

Matine, N ;

Bolognesi, CR .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2799-2801

[3] Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation [J].

Matsuoka, Y ;

Yamahata, S ;

Kurishima, K ;

Ito, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (11) :5646-5654

[4] Transferred-substrate HBTs with 254GHz fτ [J].

Mensa, D ;

Lee, Q ;

Guthrie, J ;

Jaganathan, S ;

Rodwell, MJW .

ELECTRONICS LETTERS, 1999, 35 (07) :605-606

[5] The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's [J].

Niu, G ;

Cressler, JD .

SOLID-STATE ELECTRONICS, 1999, 43 (12) :2225-2230

[6] Band gaps and band offsets in strained GaAs1-ySby on InP grown by metalorganic chemical vapor deposition [J].

Peter, M ;

Herres, N ;

Fuchs, F ;

Winkler, K ;

Bachem, KH ;

Wagner, J .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :410-412

[7]

SANO E, 1998, HIGH SPEED CIRCUITS, P567

[8]

WATKINS SP, 2000, 10 INT C MET VAP PHA

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Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with FT as high as 250 GHz and BVCEO &gt; 6V

Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with FT as high as 250 GHz and BVCEO > 6V