Band gaps and band offsets in strained GaAs1-ySby on InP grown by metalorganic chemical vapor deposition

被引：77

作者：

Peter, M ^{[1
]}

Herres, N ^{[1
]}

Fuchs, F ^{[1
]}

Winkler, K ^{[1
]}

Bachem, KH ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.123044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metastable GaAs1-ySby with 0.22 <y<0.70 has been grown pseudomorphically strained on (001) InP substrates using metalorganic chemical vapor deposition. The Sb concentration and layer thicknesses, ranging from 24 to 136 nm, were determined by high resolution x-ray diffraction (HRXRD) measurements. Low-temperature photoluminescence (PL) spectroscopy revealed spatially indirect band-to-band emission of electrons localized in the InP and holes in the GaAs1-ySby. At increased excitation power densities samples with layer thicknesses above 65 nm showed, also, spatially direct PL across the band gap of the strained GaAs1-ySby. From the PL data the band gap energy and the band offsets of GaAs1-ySby relative to InP were derived and compared with the predictions of the Model Solid Theory. (C) 1999 American Institute of Physics. [S0003-6951(99)04203-5].

引用

页码：410 / 412

页数：3

共 20 条

[1] TYPE-II BAND ALIGNMENT IN SI/SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY [J].

BAIER, T ;

MANTZ, U ;

THONKE, K ;

SAUER, R ;

SCHAFFLER, F ;

HERZOG, HJ .

PHYSICAL REVIEW B, 1994, 50 (20) :15191-15196

[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].

CHERNG, MJ ;

STRINGFELLOW, GG ;

COHEN, RM .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679

[4] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].

CHIU, TH ;

TSANG, WT ;

CHU, SNG ;

SHAH, J ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410

[5] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399

[6] High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 mu m surface emitting lasers [J].

Genty, F ;

Almuneau, G ;

Chusseau, L ;

Boissier, G ;

Malzac, JP ;

Salet, P ;

Jacquet, J .

ELECTRONICS LETTERS, 1997, 33 (02) :140-142

[7] Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices [J].

Herres, N ;

Fuchs, F ;

Schmitz, J ;

Pavlov, KM ;

Wagner, J ;

Ralston, JD ;

Koidl, P ;

Gadaleta, C ;

Scamarcio, G .

PHYSICAL REVIEW B, 1996, 53 (23) :15688-15705

[8] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS1-XSBX (0-LESS-THAN-X-LESS-THAN-0.5) ON GAAS AND INP SUBSTRATES [J].

HUANG, D ;

CHYI, J ;

KLEM, J ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5859-5862

[9] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[10]

MADELUNG O, 1987, LANDOLTBORNSTEIN N A, V22, P107

← 1 2 →