Multiscale modeling, simulations, and experiments of coating growth on nanofibers. Part II. Deposition

被引:7
作者
Buldum, A [1 ]
Clemons, CB
Dill, LH
Kreider, KL
Young, GW
Zheng, X
Evans, EA
Zhang, G
Hariharan, SI
机构
[1] Univ Akron, Dept Phys, Akron, OH 44325 USA
[2] Univ Akron, Dept Theoret & Appl Math, Div Appl Math, Akron, OH 44325 USA
[3] Univ Akron, Dept Chem Engn, Akron, OH 44325 USA
[4] Univ Akron, Dept Elect & Comp Engn, Akron, OH 44325 USA
关键词
D O I
10.1063/1.2007849
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work is Part II of an integrated experimental/modeling investigation of a procedure to coat nanofibers and core-clad nanostructures with thin-film materials using plasma-enhanced physical vapor deposition. In the experimental effort, electrospun polymer nanofibers are coated with aluminum materials under different operating conditions to observe changes in the coating morphology. This procedure begins with the sputtering of the coating material from a target. Part I [J. Appl. Phys. 98, 044303 (2005)] focused on the sputtering aspect and transport of the sputtered material through the reactor. That reactor level model determines the concentration field of the coating material. This field serves as input into the present species transport and deposition model for the region surrounding an individual nanofiber. The interrelationships among processing factors for the transport and deposition are investigated here from a detailed modeling approach that includes the salient physical and chemical phenomena. Solution strategies that couple continuum and atomistic models are used. At the continuum scale, transport dynamics near the nanofiber are described. At the atomic level, molecular dynamics (MD) simulations are used to study the deposition and sputtering mechanisms at the coating surface. Ion kinetic energies and fluxes are passed from the continuum sheath model to the MD simulations. These simulations calculate sputtering and sticking probabilities that in turn are used to calculate parameters for the continuum transport model. The continuum transport model leads to the definition of an evolution equation for the coating-free surface. This equation is solved using boundary perturbation and level set methods to determine the coating morphology as a function of operating conditions. (c) 2005 American Institute of Physics.
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页数:16
相关论文
共 23 条
[1]
Allen M. P., 1996, COMPUTER SIMULATION
[2]
Multiscale modeling, simulations, and experiments of coating growth on nanofibers. Part I. Sputtering [J].
Buldum, A ;
Busuladzic, I ;
Clemons, CB ;
Dill, LH ;
Kreider, KL ;
Young, GW ;
Evans, EA ;
Zhang, G ;
Hariharan, SI ;
Kiefer, W .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[3]
Molecular dynamics-based ion-surface interaction models for ionized physical vapor deposition feature scale simulations [J].
Coronell, DG ;
Hansen, DE ;
Voter, AF ;
Liu, CL ;
Liu, XY ;
Kress, JD .
APPLIED PHYSICS LETTERS, 1998, 73 (26) :3860-3862
[4]
A MATHEMATICAL-MODEL FOR A PARALLEL PLATE PLASMA-ETCHING REACTOR [J].
ECONOMOU, DJ ;
ALKIRE, RC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) :2786-2794
[5]
A TIME-AVERAGE MODEL OF THE RF PLASMA SHEATH [J].
ECONOMOU, DJ ;
EVANS, DR ;
ALKIRE, RC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) :756-763
[6]
INTERATOMIC POTENTIALS FROM 1ST-PRINCIPLES CALCULATIONS - THE FORCE-MATCHING METHOD [J].
ERCOLESSI, F ;
ADAMS, JB .
EUROPHYSICS LETTERS, 1994, 26 (08) :583-588
[7]
PLASMA CARBURIZATION OF AN AXISYMMETRICAL STEEL SAMPLE [J].
GEGICK, M ;
YOUNG, GW .
SIAM JOURNAL ON APPLIED MATHEMATICS, 1994, 54 (04) :877-906
[8]
Atomistic modeling of large-scale metal film growth fronts [J].
Hansen, U ;
Vogl, P ;
Fiorentini, V .
PHYSICAL REVIEW B, 1999, 59 (12) :R7856-R7859
[9]
Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies [J].
Hansen, U ;
Rodgers, S ;
Jensen, KF .
PHYSICAL REVIEW B, 2000, 62 (04) :2869-2878
[10]
Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions [J].
Hanson, DE ;
Voter, AF ;
Kress, JD .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) :3552-3559