A TIME-AVERAGE MODEL OF THE RF PLASMA SHEATH

被引:40
作者
ECONOMOU, DJ
EVANS, DR
ALKIRE, RC
机构
[1] UNIV ILLINOIS,DEPT CHEM ENGN,URBANA,IL 61801
[2] TEKTRONIX INC,BEAVERTON,OR 97077
关键词
ION ENERGY - PARALLEL PLATE REACTOR - PLASMA REACTORS - RF PLASMA SHEATH - TIME-AVERAGE MODEL;
D O I
10.1149/1.2095737
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
(Edited Abstract)
引用
收藏
页码:756 / 763
页数:8
相关论文
共 28 条
[1]   ENERGY-TRANSFER PROCESSES IN GLOW-DISCHARGES [J].
ABRIL, I ;
GRASMARTI, A ;
VALLESABARCA, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1773-1778
[2]   THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .1. PARAMETRIC MODELING AND IMPEDANCE ANALYSIS [J].
ALLEN, KD ;
SAWIN, HH ;
MOCELLA, MT ;
JENKINS, MW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2315-2325
[3]   THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .2. MODELING OF ION-BOMBARDMENT ENERGY-DISTRIBUTIONS [J].
ALLEN, KD ;
SAWIN, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2326-2331
[4]   THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .3. MODELING OF ETCHING RATE AND DIRECTIONALITY [J].
ALLEN, KD ;
SAWIN, HH ;
YOKOZEKI, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2331-2338
[5]  
Bohm D, 1949, CHARACTERISTICS ELEC
[6]  
BOYD RLF, 1959, P R SOC LONDON A, P102
[7]   PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J].
BRUCE, RH ;
REINBERG, AR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :393-396
[8]   ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J].
BRUCE, RH .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7064-7066
[9]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[10]  
CHERRINGTON BE, 1980, GASEOUS ELECTRONICS