THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .3. MODELING OF ETCHING RATE AND DIRECTIONALITY

被引：29

作者：

ALLEN, KD

SAWIN, HH

YOKOZEKI, A

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

[2] DUPONT CO,FREON PROD LAB,WILMINGTON,DE 19898

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期

关键词：

D O I：

10.1149/1.2108402

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2331 / 2338

页数：8

共 34 条

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[4]

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[7] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

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[8]

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