Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs

被引：18

作者：

Bernát, J ^{[1
]}

Wolter, M

Fox, A

Marso, M

Flynn, J

Brandes, G

Kordos, P

机构：

[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany

[2] ATMI Corp, Danbury, CT 06810 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 01期

关键词：

D O I：

10.1049/el:20040021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of unpassivated AlGaN/GaN/SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by I-DS of 0.86 and 1.33 A/mm, g(m) of 220 and 273 mS/mm, f(T) of 33 and 43 GHz and f(max) of 54 and 61 GHz for 0.3 mum gate length devices on undoped and doped structures, respectively. The DC/pulsed I-V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN/GaN HEMTs.

引用

页码：78 / 80

页数：3

共 6 条

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