Measurement of the transient junction temperature in MOSFET devices under operating conditions

被引：55

作者：

Barlini, D. ^{[1
]}

Ciappa, M.

Mermet-Guyennet, M.

Fichtner, W.

机构：

[1] ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[2] ALSTOM Power Elect Associated Res Lab, F-65600 Semeac, France

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The capabilities of three techniques to measure the transient average junction temperature in power MOS devices based on the electrical thermo-sensitive parameters are assessed experimentally and by compact device simulation. The first two methods make use of the dependency of dI(ds),/dt on the temperature, while the third one exploits the temperature dependency of the turn ON delay of the device. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1707 / 1712

页数：6

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