Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature

被引：4

作者：

Chettaoui, A. ^{[1
]}

Penuelas, J. ^{[1
]}

Gobaut, B. ^{[1
]}

Cheng, J. ^{[1
]}

Benarmouche, A. ^{[1
]}

Robach, Y. ^{[1
]}

Hollinger, G. ^{[1
]}

Saint-Girons, G. ^{[1
]}

机构：

[1] Ecole Cent Lyon, INL, F-69134 Ecully, France

来源：

SURFACE SCIENCE | 2011年 / 605卷 / 9-10期

关键词：

Molecular beam epitaxy; Nucleation; Indium phosphide; Atomic force microscopy; X-ray scattering; Diffraction; Reflection; SURFACE;

D O I：

10.1016/j.susc.2011.02.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structural properties of InP islands grown by molecular beam epitaxy on SrTiO3 substrates are studied. The evolution of the semiconducting islands size and density with growth temperature is described. The structural results reveal an original behavior: the islands orientation with respect to the substrate can be tuned with growth temperature. Moreover; X-ray diffraction results show that the islands are fully relaxed, which is in accordance with the specificities of the semiconductor/oxide interface. The structural transition is observed by atomic force microscopy. X-ray diffraction and electron diffraction. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：912 / 916

页数：5

共 15 条

[1]

Castell MR, 2002, SURF SCI, V505, P1, DOI 10.1016/S0039-6028(02)01393-6

[2] Mixed-valence manganites [J].

Coey, JMD ;

Viret, M ;

von Molnár, S .

ADVANCES IN PHYSICS, 1999, 48 (02) :167-293

[3] Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001) [J].

Delhaye, G. ;

Merckling, C. ;

El-Kazzi, M. ;

Saint-Girons, G. ;

Gendry, M. ;

Robach, Y. ;

Hollinger, G. ;

Largeau, L. ;

Patriarche, G. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)

[4] MBE growth of MnAs on oxide substrates [J].

Fujioka, H ;

Noguchi, Y ;

Ikeda, T ;

Katada, H ;

Ono, K ;

Oshima, M .

JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) :537-541

[5] Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence [J].

Giussani, A. ;

Zaumseil, P. ;

Rodenbach, P. ;

Weidner, G. ;

Schubert, M. A. ;

Geiger, D. ;

Lichte, H. ;

Storck, P. ;

Wollschlaeger, J. ;

Schroeder, T. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)

[6]

GOBAUT B, APPL PHYS L IN PRESS

[7] ATOMIC CONTROL OF THE SRTIO3 CRYSTAL-SURFACE [J].

KAWASAKI, M ;

TAKAHASHI, K ;

MAEDA, T ;

TSUCHIYA, R ;

SHINOHARA, M ;

ISHIYAMA, O ;

YONEZAWA, T ;

YOSHIMOTO, M ;

KOINUMA, H .

SCIENCE, 1994, 266 (5190) :1540-1542

[8]

McBride B.J., 2002, NASA GLENN COEFFICIE

[9] Crystalline oxides on silicon: The first five monolayers [J].

McKee, RA ;

Walker, FJ ;

Chisholm, MF .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017

[10] Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation [J].

Niu, G. ;

Saint-Girons, G. ;

Vilquin, B. ;

Delhaye, G. ;

Maurice, J. -L. ;

Botella, C. ;

Robach, Y. ;

Hollinger, G. .

APPLIED PHYSICS LETTERS, 2009, 95 (06)

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