Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

被引：84

作者：

Niu, G. ^{[1
]}

Saint-Girons, G. ^{[1
]}

Vilquin, B. ^{[1
]}

Delhaye, G. ^{[1
]}

Maurice, J. -L. ^{[2
]}

Botella, C. ^{[1
]}

Robach, Y. ^{[1
]}

Hollinger, G. ^{[1
]}

机构：

[1] Ecole Cent Lyon, INL, UMR5270, F-69134 Ecully, France

[2] Thales Associee Univ Paris Sud, CNRS, Unite Mixte Phys, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

关键词：

amorphous state; lattice constants; molecular beam epitaxial growth; monolayers; plasticity; recrystallisation; silicon; stress relaxation; strontium compounds; thin films; THIN-FILMS; IN-SITU; INTERFACE; SILICON;

D O I：

10.1063/1.3193548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

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页数：3

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