Epitaxial growth of colossal magnetoresistive films onto Si(100)

被引：3

作者：

Hu, F. X. ^{[1
]}

Sun, J. R. ^{[1
]}

Shen, B. G. ^{[1
]}

Rong, C. B. ^{[1
]}

Gao, J. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China

[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2830687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of colossal magnetoresistive (CMR) films La0.7Ca0.3MnO3 (LCMO) and La0.9Ba0.1MnO3 (LBMO) onto Si (100) using a simple pulsed-laser deposition technique. To avoid oxidation of the Si surface, an initial growth of SrTiO3 of a few atomic layers was carried out. We found that epitaxial growth of LCMO and LBMO films on Si can be realized by optimizing the deposition process. The obtained LCMO and LBMO films show ferromagnetic nature and the resulted LCMO/Si and LBMO/Si heterojunctions exhibit good rectifying behavior with magnetically tunable characteristics. (c) 2008 American Institute of Physics.

引用

页数：3

共 15 条

[1] Surface and interface chemical composition of thin epitaxial SrTiO3 and BaTiO3 films:: Photoemission investigation [J].

Amy, F ;

Wan, A ;

Kahn, A ;

Walker, FJ ;

McKee, RA .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) :1601-1606

[2] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[3] Interface structure and phase of epitaxial SrTiO3 (110) thin films grown directly on silicon -: art. no. 131908 [J].

Hao, JH ;

Gao, J ;

Wang, Z ;

Yu, DP .

APPLIED PHYSICS LETTERS, 2005, 87 (13) :1-3

[4] Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions [J].

Hikita, Y. ;

Kozuka, Y. ;

Susaki, T. ;

Takagi, H. ;

Hwang, H. Y. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[5] Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films [J].

Hu, FX ;

Gao, J ;

Wang, ZH .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 126 (01) :102-105

[6] Good rectifying characteristic in p-n junctions composed of La0.67Ca0.33MnO3-δ/Nb-0.7 wt %-doped SrTiO3 [J].

Hu, FX ;

Gao, J ;

Sun, JR ;

Shen, BG .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1869-1871

[7] Epitaxial colossal magnetoresistive La0.67(Sr,Ca)0.33MnO3 films on Si [J].

Kim, JH ;

Khartsev, SI ;

Grishin, AM .

APPLIED PHYSICS LETTERS, 2003, 82 (24) :4295-4297

[8] Rectifying NdNiO3/Nb:SrTiO3 junctions as a probe of the surface electronic structure of NdNiO3 [J].

Kozuka, Y ;

Susaki, T ;

Hwang, HY .

APPLIED PHYSICS LETTERS, 2006, 88 (14)

[9] Structure, bonding, and band offsets of (100)SrTiO3-silicon interfaces [J].

Peacock, PW ;

Robertson, J .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5497-5499

[10] Ferromagnetism in nanocrystalline epitaxial Co:TiO2 thin films -: art. no. 222503 [J].

Pradhan, AK ;

Hunter, D ;

Dadson, JB ;

Williams, TM ;

Zhang, K ;

Lord, K ;

Lasley, B ;

Rakhimov, RR ;

Zhang, J ;

Sellmyer, DJ ;

Roy, UN ;

Cui, Y ;

Burger, A ;

Hopkins, C ;

Pearson, N ;

Wilkerson, AL .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

← 1 2 →