Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions

被引：72

作者：

Hikita, Y. ^{[1
]}

Kozuka, Y. ^{[1
]}

Susaki, T. ^{[1
]}

Takagi, H. ^{[1
]}

Hwang, H. Y. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci & Engn, Kashiwa, Chiba 2778561, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure. (c) 2007 American Institute of Physics.

引用

页数：3

共 21 条

[1] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[2] FERROELECTRIC SCHOTTKY DIODE [J].

BLOM, PWM ;

WOLF, RM ;

CILLESSEN, JFM ;

KRIJN, MPCM .

PHYSICAL REVIEW LETTERS, 1994, 73 (15) :2107-2110

[3] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].

EOM, CB ;

CAVA, RJ ;

FLEMING, RM ;

PHILLIPS, JM ;

VANDOVER, RB ;

MARSHALL, JH ;

HSU, JWP ;

KRAJEWSKI, JJ ;

PECK, WF .

SCIENCE, 1992, 258 (5089) :1766-1769

[4] Study of pulsed laser deposition of RuO2 and SrRuO3 thin films [J].

Fang, X ;

Kobayashi, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S587-S590

[5] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[6] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&

[7] METAL-SEMICONDUCTOR BARRIER-HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD-DEGENERATE 1-CARRIER SYSTEM [J].

GOODMAN, AM ;

PERKINS, DM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3351-&

[8] Photocarrier injection effect on double exchange ferromagnetism in (La, Sr)MnO3/SrTiO3 heterostructure [J].

Katsu, H ;

Tanaka, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3245-3247

[9] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[10] Why some interfaces cannot be sharp [J].

Nakagawa, N ;

Hwang, HY ;

Muller, DA .

NATURE MATERIALS, 2006, 5 (03) :204-209

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