Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions

被引：72

作者：

Hikita, Y. ^{[1
]}

Kozuka, Y. ^{[1
]}

Susaki, T. ^{[1
]}

Takagi, H. ^{[1
]}

Hwang, H. Y. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci & Engn, Kashiwa, Chiba 2778561, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure. (c) 2007 American Institute of Physics.

引用

页数：3

共 21 条

[11] Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions [J].

Nakagawa, N ;

Asai, M ;

Mukunoki, Y ;

Susaki, T ;

Hwang, HY .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

[12] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN CLEAVED GAAS [J].

NEWMAN, N ;

KENDELEWICZ, T ;

THOMSON, D ;

PAN, SH ;

EGLASH, SJ ;

SPICER, WE .

SOLID-STATE ELECTRONICS, 1985, 28 (03) :307-312

[13]

Rhoderick EH., 1988, Metal-Semiconductor Contacts

[14] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate [J].

Robertson, J ;

Chen, CW .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1168-1170

[15] DIELECTRIC PROPERTIES OF STRONTIUM TITANATE AT LOW TEMPERATURE [J].

SAIFI, MA ;

CROSS, LE .

PHYSICAL REVIEW B, 1970, 2 (03) :677-&

[16] Electron tunneling and band structure of SrTiO3 and KTaO3 [J].

Sroubek, Z. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3170-3175

[17] CAPACITANCE OF DEGENERATE-SEMICONDUCTOR SCHOTTKY BARRIERS AT LOW-TEMPERATURES [J].

STOECKLY, B .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :384-385

[18] Transport mechanisms in manganite-titanate heterojunctions [J].

Susaki, T. ;

Nakagawa, N. ;

Hwang, H. Y. .

PHYSICAL REVIEW B, 2007, 75 (10)

[19]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[20] Recent advances in Schottky barrier concepts [J].

Tung, RT .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2001, 35 (1-3) :1-138

← 1 2 3 →