SCHOTTKY BARRIERS ON ATOMICALLY CLEAN CLEAVED GAAS

被引：15

作者：

NEWMAN, N

KENDELEWICZ, T

THOMSON, D

PAN, SH

EGLASH, SJ

SPICER, WE

机构：

[1] Stanford Univ, Electronics Lab,, Stanford, CA, USA, Stanford Univ, Electronics Lab, Stanford, CA, USA

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 03期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1016/0038-1101(85)90011-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first systematic study is reported of the electronic properties of Al, Au, Ag and Cu Schottky barrier diodes on n-type GaAs. These diodes were formed on cleaved (110) surfaces in ultra-high vacuum (UHV) using similar conditions and evaporation rates during the initial stages of Schottky barrier formation as in the photoemission spectroscopy (PES) studies. Barrier height determinations using device measuring techniques (current-voltage (I-V), capacitive-voltage (C-V) and internal photoemission) are compared with the results from the PES studies. Essentially identical barrier heights are found from PES and the electrical measurements for the noble metals. The barrier height of the noble metal: n-GaAs system (0. 9 ev) is larger than any simple metal on n-type GaAs previously reported.

引用

页码：307 / 312

页数：6

共 31 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].