Recent advances in Schottky barrier concepts

被引：1106

作者：

Tung, RT ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

MATERIALS SCIENCE & ENGINEERING R-REPORTS | 2001年 / 35卷 / 1-3期

关键词：

Schottky-barrier height; interface dipole; interface states; heterojunction band offsets;

D O I：

10.1016/S0927-796X(01)00037-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data. (C) 2001 Published by Elsevier Science B.V.

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页码：1 / 138

页数：138

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