SCHOTTKY-BARRIER HEIGHT MODIFICATION ON N-TYPE SILICON BY WET CHEMICAL ETCHING

被引：5

作者：

ADEGBOYEGA, GA ^{[1
]}

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 01期

关键词：

D O I：

10.1002/pssa.2211110149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K31 / K35

页数：5

共 15 条

[1] SCHOTTKY CONTACT BARRIER HEIGHT MODIFICATION BY ION-IMPLANTATION OF AL INTO GAAS [J].

AINA, O ;

PANDE, KP .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1717-1721

[2] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J].

ASHOK, S ;

MOGROCAMPERO, A .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :48-49

[3] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J].

ASHOK, S ;

CHOW, TP ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :687-689

[4] INFLUENCE OF LOW-ENERGY ATOMIC-HYDROGEN ON ARGON-IMPLANTED SILICON SCHOTTKY BARRIERS [J].

ASHOK, S ;

GIEWONT, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L533-L535

[5]

ASHOK S, 1984, APPL PHYS LETT, V45, P431, DOI 10.1063/1.95247

[6] HIGH-BARRIER AL/P-SI SCHOTTKY DIODES [J].

ASHOK, S ;

GIEWONT, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :462-464

[7] A STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF SPUTTERED TI/SI AND SPUTTERED TISI2/SI SCHOTTKY BARRIERS [J].

DEBOSSCHER, W ;

VANMEIRHAEGHE, RL ;

DELAERE, A ;

LAFLERE, WH ;

CARDON, F .

SOLID-STATE ELECTRONICS, 1988, 31 (05) :945-951

[8] SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON [J].

FINETTI, M ;

SUNI, I ;

BARTUR, M ;

BANWELL, T ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1984, 27 (07) :617-623

[9] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :423-425

[10] ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING [J].

GRUSELL, E ;

BERG, S ;

ANDERSSON, LP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1573-1576

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