HIGH-BARRIER AL/P-SI SCHOTTKY DIODES

被引：26

作者：

ASHOK, S

GIEWONT, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 09期

关键词：

D O I：

10.1109/EDL.1985.26193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：462 / 464

页数：3

共 20 条

[1] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J].

ASHOK, S ;

MOGROCAMPERO, A .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :48-49

[2] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J].

ASHOK, S ;

CHOW, TP ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :687-689

[3]

ASHOK S, 1984, APPL PHYS LETT, V45, P431, DOI 10.1063/1.95247

[4]

ASHOK S, 1984, J APPL PHYS, V56, P1237, DOI 10.1063/1.334058

[5] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS [J].

ASHOK, S ;

FONASH, SJ ;

SINGH, R ;

WILEY, P .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :184-186

[6] NOTE ON EVALUATION OF SCHOTTKY DIODE PARAMETERS IN PRESENCE OF AN INTERFACIAL LAYER [J].

ASHOK, S ;

BORREGO, JM ;

GUTMANN, RJ .

ELECTRONICS LETTERS, 1978, 14 (11) :332-333

[7]

ASHOK S, UNPUB UBIQUITY ION B

[8] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[9] MODIFICATION OF METAL-SILICON CONTACTS BY LOW-ENERGY ARGON ION-BOMBARDMENT [J].

CHOUIYAKH, A ;

LANG, B .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (12) :971-978

[10] GROWTH AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE CONTACTS ON DRY-ETCHED SILICON SURFACES [J].

CLIMENT, A ;

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1063-1069

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