NOTE ON EVALUATION OF SCHOTTKY DIODE PARAMETERS IN PRESENCE OF AN INTERFACIAL LAYER

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[2] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89

[3] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[4] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1231 - +

[5] TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4413 - 4414

[6] KELLNER W, 1977, P IEEE INT ELECTRON, P599

[7] Smith B. L., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P465

[8] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P393

[10] WADA A, 1978, ELECTRON LETT, V14, P125

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[2] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1973, 9 (04) : 88 - 89

[3] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[4] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1231 - +

[5] TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4413 - 4414

[6] KELLNER W, 1977, P IEEE INT ELECTRON, P599

[7] Smith B. L., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P465

[8] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P393

[10] WADA A, 1978, ELECTRON LETT, V14, P125