P-N-JUNCTIONS IN SURFACE REGION OF SILICON OBTAINED BY EVAPORATION OF SILICON IN ULTRAHIGH-VACUUM

被引：16

作者：

ALEKSANDROV, LN

LOVYAGIN, RN

SIMONOV, PA

BZINKOVSKAYA, IS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 45卷 / 02期

关键词：

D O I：

10.1002/pssa.2210450220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 527

页数：7

共 8 条

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[2] ALEKSANDROV LN, 1977, MIKROELEKTRONIKA, V6, P460
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BUCK, TM
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[7] CARBIDE CONTAMINATION OF SILICON SURFACES
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[8] TECHNIQUE FOR DIRECTLY PLOTTING DOPING PROFILE OF SEMICONDUCTOR WAFERS (8-SHAPED WAY)
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 87 - 91