TECHNIQUE FOR DIRECTLY PLOTTING DOPING PROFILE OF SEMICONDUCTOR WAFERS (8-SHAPED WAY)

被引：3

作者：

NAKHMANSON, RS ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK 630090,USSR

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 01期

关键词：

D O I：

10.1016/0038-1101(76)90138-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 91

页数：5

共 14 条

[1] INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES
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COLLIVER, DJ
FRAY, AF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03): : 213 - +
[2] AN AUTOMATIC TEST SET FOR MEASURING DOPING PROFILE OF SEMICONDUCTOR EPITAXIAL LAYERS
CALIFANO, FP
LUCIANO, A
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (06) : 865 - &
[3] DIODE EDGE EFFECT ON DOPING-PROFILE MEASUREMENTS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 404 - &
[4] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &
[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[6] MEASUREMENT OF SEMICONDUCTOR CARRIER CONCENTRATION PROFILES
HUGHES, FD
WILSON, M
HEADON, RF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (03): : 241 - &
[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
OBRIEN, RR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) : 212 - &
[8] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
MURLEY, PC
KLEINFELDER, W
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +
[9] LANDBROOKE PH, 1971, INT J ELECTRONICS, V31, P149
[10] INVESTIGATIONS OF MIS STRUCTURE INHOMOGENEITIES USING A SCANNING MERCURY PROBE
NAKHMANS.RS
DOBROVOL.PP
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (01): : 225 - 241

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