EFFECT OF INTERFACIAL HYDROGEN IN COSI2/SI(100) SCHOTTKY-BARRIER CONTACTS

被引：13

作者：

ABOELFOTOH, MO

MARWICK, AD

FREEOUF, JL

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10753

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effect of hydrogen in the CoSi2/Si(100) interface on the Schottky-barrier height of CoSi2 on n-type and p-type Si(100). It was found that hydrogenation results in an increase of 120 meV in the barrier height to n-type Si(100). Measurements of the hydrogen concentration in the interface, using quantitative ion-beam techniques, were used to establish the correlation between the change in barrier height and hydrogen concentration; other hydrogen effects such as passivation of shallow donor and acceptor impurities in silicon were ruled out. The results demonstrate that 8 X 10(15) hydrogen atoms/cm2 can alter an interface layer and thereby change the pinning position of the Fermi level.

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页码：10753 / 10756

页数：4

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