EFFECTS OF HYDROGEN ON AL/P-SI SCHOTTKY-BARRIER DIODES

被引:20
作者
JIA, YQ [1 ]
QIN, GG [1 ]
机构
[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
关键词
D O I
10.1063/1.102723
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hydrogen was incorporated into B-doped p-type crystalline silicon in three different ways: boiling the sample in water, exposing the sample to hydrogen plasma, growing silicon in a hydrogen atmosphere. Al-contact Schottky barrier diodes were made on both the hydrogenated and unhydrogenated samples. It was found that the Schottky barrier height (SBH) is increased due to the hydrogenation. The current-voltage measurement showed an increase of 0.06-0.10 eV in the effective SBH and the activation energy measurement revealed an increase of 0.07-0.09 eV in the SBH under a forward bias of 0.15 V. If the silicon grown in a hydrogen atmosphere was thermal annealed at 650°C to drive out hydrogen before Schottky metallization, then the SBH approached that of the unhydrogenated sample. It is demonstrated that the SBH in Al/p-Si can be increased with hydrogen incorporated in silicon.
引用
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页码:641 / 643
页数:3
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