STATES AT EPITAXIAL NISI2/SI HETEROJUNCTIONS STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND HYDROGENATION

被引：20

作者：

CHANTRE, A ^{[1
]}

LEVI, AFJ ^{[1
]}

TUNG, RT ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

ANZLOWAR, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.34.4415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4415 / 4418

页数：4

共 19 条

[1] FROITZHEIM H, 1984, PHYS REV B, V30, P5771, DOI 10.1103/PhysRevB.30.5771
[2] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI
HAUENSTEIN, RJ
SCHLESINGER, TE
MCGILL, TC
HUNT, BD
SCHOWALTER, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 853 - 855
[3] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
HERRING, C
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772
[4] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 995 - 997
[5] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142
[6] CAPACITANCE TRANSIENT SPECTROSCOPY
MILLER, GL
LANG, DV
KIMERLING, LC
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448
[7] P-TYPE SURFACE-LAYERS ON N-TYPE SILICON HEAT-CLEANED IN UHV
MOTTRAM, JD
THANAILAKIS, A
NORTHROP, DC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (11) : 1316 - 1320
[8] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON
PANKOVE, JI
LAMPERT, MA
TARNG, ML
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 439 - 441
[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
WANCE, RO
BERKEYHEISER, JE
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1100 - 1102
[10] PEARTON SJ, 1986, P MAT RES SOC, V59, P459

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