SCHOTTKY CONTACT BARRIER HEIGHT ENHANCEMENT ON PARA-TYPE SILICON BY WET CHEMICAL ETCHING

被引：7

作者：

ADEGBOYEGA, GA

POGGI, A

SUSI, E

CASTALDINI, A

CAVALLINI, A

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

[2] UNIV BOLOGNA,INST PHYS,GNSM CISM GRP,I-40126 BOLOGNA,ITALY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 04期

关键词：

D O I：

10.1007/BF00618904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：391 / 395

页数：5

共 19 条

[1] HIGH-BARRIER AL/P-SI SCHOTTKY DIODES [J].

ASHOK, S ;

GIEWONT, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :462-464

[2] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2 [J].

CARD, HC .

SOLID STATE COMMUNICATIONS, 1974, 14 (10) :1011-1014

[3] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[4] AL P-SILICON MOS PHOTOVOLTAIC CELL [J].

CHARLSON, EJ ;

LIEN, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3982-3987

[5] A STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF SPUTTERED TI/SI AND SPUTTERED TISI2/SI SCHOTTKY BARRIERS [J].

DEBOSSCHER, W ;

VANMEIRHAEGHE, RL ;

DELAERE, A ;

LAFLERE, WH ;

CARDON, F .

SOLID-STATE ELECTRONICS, 1988, 31 (05) :945-951

[6] A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1966-1975

[7] CURRENT-VOLTAGE CHARACTERISTIC OF TI-PSI METAL-OXIDE-SEMICONDUCTOR DIODES [J].

HANSELAER, PL ;

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2309-2314

[8] AN EXPERIMENTAL-STUDY OF TI-PSI MIS TYPE SCHOTTKY BARRIERS [J].

HANSELAER, PL ;

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (02) :L7-L10

[9] IN-DEPTH PROFILING OF SPUTTER-INDUCED SPACE-CHARGE COMPENSATION IN P-SILICON SCHOTTKY BARRIERS [J].

HELLINGS, GJA ;

STRAAYER, A ;

KIPPERMAN, AHM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2067-2071

[10] ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES [J].

IOANNOU, DE ;

HUANG, YJ ;

MCLARTY, PK ;

JOHNSON, SM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :K223-K226

← 1 2 →