ON THE BARRIER HEIGHT OF AL/P-SI SCHOTTKY DIODES

被引：2

作者：

IOANNOU, DE ^{[1
]}

HUANG, YJ ^{[1
]}

MCLARTY, PK ^{[1
]}

JOHNSON, SM ^{[1
]}

机构：

[1] SOLAREX CORP,ROCKVILLE,MD 20850

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING SILICON - SEMICONDUCTOR DIODES;

D O I：

10.1002/pssa.2210930266

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This report presents experimental data on aluminum/p-type polycrystalline silicon Schottky diodes. The authors examined SEM-EBIC micrographs but failed to detect the presence of interfacial layers. The reasons for the large barrier heights obtained and the discrepancy in the values obtained from two different measurement methods might be surface structural defects.

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收藏

页码：K223 / K226

页数：4

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