HIGH-BARRIER SCHOTTKY DIODES ON PARA-TYPE SILICON DUE TO DRY-ETCHING DAMAGE

被引：33

作者：

MU, XC

FONASH, SJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：410 / 412

页数：3

共 22 条

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[3]

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[5]

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[7]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[8] EFFECT OF NEUTRAL ION-BEAM SPUTTERING AND ETCHING ON SILICON [J].

FONASH, SJ ;

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[9] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

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[10]

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