SCHOTTKY BARRIERS ON P-TYPE SILICON

被引：96

作者：

SMITH, BL

RHODERICK, EH

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 01期

关键词：

D O I：

10.1016/0038-1101(71)90049-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / +

页数：1

共 10 条

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[8]

SMITH BL, 1969, THESIS U MANCHESTER

[9] METAL-SILICON SCHOTTKY BARRIERS [J].

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[10] P-N JUNCTION-SCHOTTKY BARRIER HYBRID DIODE [J].

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