Influence of Mg content on the band alignment at CdS/(Zn,Mg)O interfaces -: art. no. 032101

被引：66

作者：

Rao, GV ^{[1
]}

Säuberlich, F ^{[1
]}

Klein, A ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Surface Sci Div, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.1995951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this investigation, we studied electronic properties of the CdS/Zn1-xMgxO (x = 0, 0.15) interface using photoelectron spectroscopy. ZnO and (Zn,Mg)O films were deposited by magnetron sputtering from ceramic targets on thermally evaporated CdS. Valence-band offsets of Delta E-V = 1.2 +/- 0.1 eV are determined for both interfaces. The gap difference of 0.3 eV between ZnO and Zn0.85Mg0.15O is therefore fully accommodated by a different conduction-band energy, which should be well suited for modulation doping in ZnO/(Zn, Mg)O heterostructures. (c) 2005 American Institute of Physics.

引用

页数：3

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