Fabrication of ITO thin films by filtered cathodic vacuum arc deposition

被引：25

作者：

Chen, BJ ^{[1
]}

Sun, XW ^{[1
]}

Tay, BK ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 106卷 / 03期

关键词：

ITO thin films; filtered cathodic vacuum arc; electrical properties; atomic force; microscopy; transmittance;

D O I：

10.1016/j.mseb.2003.09.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline indium-tin-doped oxide (ITO) thin films have been fabricated on Si(111) and quartz substrates by filtered cathodic vacuum arc (FCVA) technique for the first time. The ITO thin films were deposited at different substrate temperature and oxygen gas flow rates into the reactor chamber. The films deposited at low temperature below 100degreesC are amorphous. The films grown between 200 and 350degreesC mainly oriented in the (222), (400), (440), and (6 2 2) directions both on silicon substrate and quartz substrate. The optimized ITO film has a high transmittance of about 95% in the wavelength range of 400-800 nm, the volume resistivity is 6.57 x to(-4) Omega cm and the electron carrier concentration is as high as 1.62 x 10(21) cm(-3). Atomic force microscopy (AFM) images show that the surface of ITO film is very smooth both on silicon and quartz substrates, the RMS average roughness is 2.24 nm for silicon substrate and 2.43 nm for quartz substrate respectively. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：300 / 304

页数：5

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