Structural effect on electronic sputtering of hydrogenated amorphous carbon films

被引：18

作者：

Ghosh, S

Ingale, A

Som, T

Kabiraj, D

Tripathi, A

Mishra, S

Zhang, S

Hong, X

Avasthi, DK

机构：

[1] Ctr Nucl Sci, New Delhi 110067, India

[2] Ctr Adv Technol, Indore 452013, India

[3] Gint Inst Mfg Technol, Singapore, Singapore

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 120卷 / 11期

关键词：

swift heavy ion; electronic sputtering; hydrogenated amorphous carbon; elastic recoil detection analysis; thermal spike; Raman spectroscopy;

D O I：

10.1016/S0038-1098(01)00426-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A large erosion (similar to 10(5) atoms/ion) of C and H from hydrogenated amorphous carbon films (a-C:H) is observed due to the bombardment of 150 MeV Ag13+ ions. The erosion rate is monitored on-line by elastic recoil detection analysis (ERDA) technique. From the set of four samples under study, two films show erosion of both C and H, whereas, only H depletion takes place from the other two films. The observed variation in sputtering yield in different films is explained on the basis of structure and chemical environment of the films. It is shown in the framework of thermal spike model that the thermal energy confinement due to smaller cluster or domain sizes of the film influences the erosion. Structure of the films is revealed by Raman spectroscopy and is discussed on the basis of their Raman G and D modes. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：445 / 450

页数：6

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