Properties of CdSe nanoparticle films prepared by chemical deposition and sol-gel methods

被引:147
作者
Lifshitz, E [1 ]
Dag, I
Litvin, I
Hodes, G
Gorer, S
Reisfeld, R
Zelner, M
Minti, H
机构
[1] Technion Israel Inst Technol, Dept Chem, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[3] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[4] Hebrew Univ Jerusalem, Dept Inorgan Chem, IL-91904 Jerusalem, Israel
关键词
D O I
10.1016/S0009-2614(98)00283-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
CdSe nanoparticle films were prepared by chemical solution deposition and formation in a silica sol-gel matrix. X-ray powder diffraction and transmission electron microscope measurements confirmed a cubic crystallographic structure of the nanoparticles, with mean diameter varying from 4 to 20 nm, The absorption and photoluminescence spectra of the smaller crystals were strongly blue-shifted due to size quantization. This Letter focuses on the study of a non-excitonic emission band, which can be associated with surface states. The results indicate that this band involves the recombination between shallow trapped electrons and deep trapped holes, with a donor-acceptor-like recombination and are analyzed in terms of the configuration coordinate model. The CdSe nanoparticles prepared by the two different methods showed essentially the same optical behavior. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:188 / 196
页数:9
相关论文
共 33 条
[11]   MELTING IN SEMICONDUCTOR NANOCRYSTALS [J].
GOLDSTEIN, AN ;
ECHER, CM ;
ALIVISATOS, AP .
SCIENCE, 1992, 256 (5062) :1425-1427
[12]   QUANTUM-SIZE EFFECTS IN THE STUDY OF CHEMICAL SOLUTION DEPOSITION MECHANISMS OF SEMICONDUCTOR-FILMS [J].
GORER, S ;
HODES, G .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (20) :5338-5346
[13]  
GORER S, 1996, SEMICONDUCTOR NANOCL, P297
[15]   THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J].
HUANG, K ;
RHYS, A .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078) :406-423
[16]  
Jaros M., 1982, Deep levels in semiconductors
[17]   X-RAY PHOTOELECTRON-SPECTROSCOPY OF CDSE NANOCRYSTALS WITH APPLICATIONS TO STUDIES OF THE NANOCRYSTAL SURFACE [J].
KATARI, JEB ;
COLVIN, VL ;
ALIVISATOS, AP .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (15) :4109-4117
[18]   PHOTOLUMINESCENCE FROM DEEP CENTERS IN GAAS [J].
KOSCHEL, WH ;
BISHOP, SG ;
MCCOMBE, BD .
SOLID STATE COMMUNICATIONS, 1976, 19 (06) :521-524
[19]  
KRONIK L, 1998, IN PRESS J ELECTROCH
[20]   Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells [J].
Mews, A ;
Kadavanich, AV ;
Banin, U ;
Alivisatos, AP .
PHYSICAL REVIEW B, 1996, 53 (20) :13242-13245