Influence of contact metals on the performance and morphology of pentacene bottom-contact field-effect transistors

被引：7

作者：

Bock, C. ^{[1
]}

Pham, D. V. ^{[1
]}

Kunze, U. ^{[1
]}

Kaefer, D. ^{[1
]}

Witte, G. ^{[1
]}

Woell, Ch. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 06期

关键词：

organic field-effect transistor; pentacene; contact resistance; sheet resistance;

D O I：

10.1016/j.physe.2007.09.194

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In pentacene-based bottom-contact field-effect transistors we study the influence of source and drain contact metals (gold, palladium, and platinum) on the morphology and transistor performance. Transistors prepared with I'd electrodes show a reduced contact and sheet resistance, a reduced activation energy, and a closer packed pentacene film in the channel region. (C) 2007 Elsevier B.V. All rights reserved.

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页码：2107 / 2109

页数：3

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