30 nm channel length pentacene transistors

被引：78

作者：

Zhang, YJ

Petta, JR

Ambily, S

Shen, YL

Ralph, DC

Malliaras, GG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 19期

关键词：

D O I：

10.1002/adma.200305158

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Advances in sample fabrication have allowed the fabrication of pentacene transistors with channel lengths down to 30 nm. The Figure shows a transistor with a channel length and width of 27 nm and 130 nm, respectively. Graceful scaling of the current-voltage characteristics as a function of channel length and width is demonstrated.

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收藏

页码：1632 / +

页数：5

相关论文

共 16 条

[1] Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography [J].

Austin, MD ;

Chou, SY .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4431-4433

[2] Field effect transport measurements on single grains of sexithiophene: Role of the contacts [J].

Chwang, AB ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (51) :12202-12209

[3] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films [J].

Collet, J ;

Tharaud, O ;

Chapoton, A ;

Vuillaume, D .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1941-1943

[4]

Collet J, 1998, MATER RES SOC SYMP P, V488, P407

[5]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[6]

2-9

[7] NOVEL SUB-100-NM THIN-FILM TRANSISTORS [J].

FRANSSILA, S ;

PALOHEIMO, J ;

KUIVALAINEN, P .

ELECTRONICS LETTERS, 1993, 29 (08) :713-714

[8] Field effect conductance measurements on thin crystals of sexithiophene [J].

Granstrom, EL ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (42) :8842-8849

[9] Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization [J].

Guillorn, MA ;

Carr, DW ;

Tiberio, RC ;

Greenbaum, E ;

Simpson, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1177-1181

[10] High-performance bottom electrode organic thin-film transistors [J].

Kymissis, I ;

Dimitrakopoulos, CD ;

Purushothaman, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1060-1064