Hydrogen peroxide etching and stability of P-type poly-SiGe films

被引：7

作者：

Bircumshaw, BL ^{[1
]}

Wasilik, ML ^{[1
]}

Kim, EB ^{[1
]}

Su, YR ^{[1
]}

Takeuchi, H ^{[1
]}

Low, CW ^{[1
]}

Liu, G ^{[1
]}

Pisano, AP ^{[1
]}

King, TJ ^{[1
]}

Howe, RT ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/MEMS.2004.1290635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a model is developed for the etching of asdeposited, in-situ, boron-doped, LPCVD poly-SiGe films in hydrogen peroxide. The model is corroborated by etching results for poly-SiGe alloys with Ge content between 55 and 70%. The results indicate that Ge content in the 55 to 65% range is desirable for maintaining high selectivity with respect to poly-Ge sacrificial layers in a peroxide etch while attaining a polycrystalline film structure (at about 425degreesC, 50% Ge content poly-SiGe films are amorphous). The drift in residual stress of poly-SiGe films at room temperature in dry and wet ambients is also reported. Finally, the etching of in-situ, boron-doped, LPCVD poly-Ge films in hydrogen peroxide is studied.

引用

页码：514 / 519

页数：6

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