Capacitance measurements of double-metal double-sided silicon microstrip detectors

被引：9

作者：

Bortoletto, D

Garfinkel, AF

Hardman, AD

Hoffman, KD

Keaffaber, TA

Shaw, NM

Stanley, GR

机构：

[1] Physics Department, Purdue University, West Lafayette

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 383卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(96)00663-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Double-metal double-sided silicon microstrip prototype sensors have been developed by Sintef/SI, Micron Semiconductor, and Hamamatsu Photonics for the CDF silicon vertex detector upgrade, SVXII. The sensors are biased with polysilicon resistors and have integrated AC-coupling and p-stop isolation. We present measurements of the total capacitance, interstrip capacitance and overlap capacitance due to the double metal structure. The measurements are compared to a simple electrostatic model.

引用

页码：104 / 109

页数：6

共 6 条

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