CMOS-based microsensors and packaging

被引:50
作者
Baltes, H [1 ]
Brand, O [1 ]
机构
[1] ETH Zurich, Phys Elect Lab, CH-8093 Zurich, Switzerland
关键词
CMOS; post-processing; chemical sensor; infrared radiation sensor; thermal imager; ball bond characterization; wire bonder calibration;
D O I
10.1016/S0924-4247(01)00532-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CMOS-based microsensors benefit from well-established fabrication technologies and the possibility of on-chip circuitry. In these devices, added on-chip functionality can be implemented, such as calibration, self testing, and digital interfaces. The paper summarizes major technological approaches to CMOS-based microsensors. Two packaged microsystems, namely a thermal imager and a chemical , microsystem, fabricated using CMOS technology in combination with bulk-micromachining and thin film deposition, are reviewed. Finally, CMOS microsensors for the characterization and optimization of ball bonding processes in the microelectronics packaging industry are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 9
页数:9
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