A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film

被引：21

作者：

Aleshin, Andrey N. ^{[1
]}

Shcherbakov, Igor P. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 31期

关键词：

AMBIPOLAR TRANSPORT; HIGH-MOBILITY;

D O I：

10.1088/0022-3727/43/31/315104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a light-emitting organic field-effect transistor (LE-OFET) based on a polyfluorene (PFO)-ZnO nanoparticles film. We have analysed the behaviour of absorption, photoluminescence spectra and electroluminescence (EL) intensity of the PFO : ZnO hybrid films with different ZnO concentrations prepared in the FET configuration. We have found that the PFO : ZnO LE-OFET exhibits the current-voltage characteristics of a unipolar FET with saturation behaviour and operates in the hole accumulation mode. The FET mobility values in the PFO : ZnO films with a high ZnO concentration are close to the mobility of polycrystalline ZnO. A significant increase in the EL intensity of the hybrid films has been observed with an increase in the concentration of ZnO nanoparticles and with the application of gate voltages. The working mechanism of the LE-OFET device is discussed.

引用

页数：5

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