Scaling laws of femtosecond laser pulse induced breakdown in oxide films

被引：317

作者：

Mero, M ^{[1
]}

Liu, J

Rudolph, W

Ristau, D

Starke, K

机构：

[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

[2] Laser Zentrum Hannover eV, D-30419 Hannover, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.71.115109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scaling of the single-pulse laser threshold fluence for dielectric breakdown with respect to pulse duration and material band gap energy was investigated in the subpicosecond pulse regime using oxide films (TiO2, Ta2O5, HfO2, Al2O3, and SiO2). A phenomenological model attributes the pulse duration dependence to the interplay of multiphoton ionization, impact ionization, and subpicosecond electron decay out of the conduction band. The observed linear scaling of the breakdown fluence with band gap energy can be explained within the framework of this model by invoking the band gap dependence of the multiphoton absorption coefficient from Keldysh photoionization theory. The power exponent kappa of the observed dependence of the breakdown threshold fluence F-th on pulse duration tau(p), F-th proportional to tau(kappa)(p), is independent of the material and is attributed to photoionization seeded avalanche ionization.

引用

页数：7

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