Synthesis and characterization of Ti-Si-C compounds for electrical contact applications

被引：8

作者：

Eklund, P ^{[1
]}

Emmerlich, J ^{[1
]}

Högberg, H ^{[1
]}

Persson, POA ^{[1
]}

Hultman, L ^{[1
]}

Wilhelmsson, O ^{[1
]}

Jansson, U ^{[1
]}

Isberg, P ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys, Thin Film Phys Div, IFM, S-58183 Linkoping, Sweden

来源：

PROCEEDINGS OF THE FIFTY-FIRST IEEE HOLM CONFERENCE ON ELECTRICAL CONTACTS | 2005年

关键词：

electrical contact; nanocomposite; TiC; Ti3SiC2; MAX-phase; sputtering;

D O I：

10.1109/HOLM.2005.1518257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a growth study of Ti-Si-C thin films on Cu and Al substrates for contact resistance studies. The films were grown by magnetron sputtering from Ti3SiC2 compound targets at temperatures from 100 degrees C to 300 degrees C. The films consist of TiCx nanocrystallites embedded in an amorphous SiC matrix. Mechanically, the Ti-Si-C films exhibit a nanoindentation hardness of 20 GPa and an elastic modulus of 290 GPa, reflecting a carbidic nature but with a remarkable ductile behavior. In electrical contact studies, the contact resistance of the Ti-Si-C films, deposited on Ni-plated Al washers at 300 degrees C, against Ag was comparable to that of Ag against Ag at high contact forces (6 mu Omega and 3.2 mu Omega, respectively, at 800 N). At lower forces the difference is significant due to the formation of surface oxides. In a crossed cylinder setup, the contact resistance of Ti-Si-C films deposited on Ni-plated Cu cylinders is typically a factor 5 higher than that of Ag against Ag. Encouragingly, Ti-Si-C films deposited at 100 degrees C exhibited contact resistances less than double of that of films deposited at 300 degrees C-C. We conclude that, while significant work remains on process optimization and analysis, Ti-Si-C has high potential in general electrical contact applications.

引用

页码：277 / 283

页数：7

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