The Hall insulator in 2-dimensional SiGe hole gases

被引：24

作者：

Coleridge, PT

Sachrajda, AS

Zawadzki, P

Williams, RL

Lafontaine, H

机构：

[1] Inst. for Microstructural Sciences, National Research Council, Ottawa

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 10期

关键词：

semiconductors; quantum Hall effect; phase transitions;

D O I：

10.1016/S0038-1098(97)00077-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetotransport measurements in p-SiGe quantum well samples show that the Landau levels are ferromagnetically polarised at filling factor nu = 2. It is also shown that the insulating phase observed in some samples at nu = 1.5 is suppressed-when the ferromagnetic polarisation persists into the nu = 1 integer quantum Hall state. Similarities and differences between p-SiGe and high mobility Si-MOSFETs are also discussed. Crown copyright (C) 1997 Published by Elsevier Science Ltd.

引用

页码：755 / 758

页数：4

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